Summary form only given. High-power diode lasers are important for a wide range of applications, e.g. as pump sources for solid state lasers and tools for material processing. For managing the thermal load connected with high power operation, complex device and heat sink architectures are required. In particular, the semiconductor structure must be mounted 'p-side down' on a heat sink of high thermal conductivity. In such a geometry, mechanical strain of the active region represents a central issue, affecting both the parameters of laser emission and the lifetime of the device.
Spectroscopic measurement of packaging induced strains in high-power laser diode arrays
1999-01-01
311016 byte
Conference paper
Electronic Resource
English
High power visible laser diode arrays
IEEE | 1996
|High Power Visible Laser Diode Arrays
British Library Conference Proceedings | 1996
|High-Power Phase-Locked Diode-Laser Arrays
British Library Conference Proceedings | 1993
|Deep Level Spectroscopy in High-Power Laser Diode Arrays
British Library Conference Proceedings | 1997
|