Summary form only given. High-power diode lasers are important for a wide range of applications, e.g. as pump sources for solid state lasers and tools for material processing. For managing the thermal load connected with high power operation, complex device and heat sink architectures are required. In particular, the semiconductor structure must be mounted 'p-side down' on a heat sink of high thermal conductivity. In such a geometry, mechanical strain of the active region represents a central issue, affecting both the parameters of laser emission and the lifetime of the device.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Spectroscopic measurement of packaging induced strains in high-power laser diode arrays


    Beteiligte:
    Tomm, J.W. (Autor:in) / Muller, R. (Autor:in) / Barwolff, A. (Autor:in) / Elsaesser, T. (Autor:in) / Gerhardt, A. (Autor:in) / Donecker, J. (Autor:in) / Lorenzen, D. (Autor:in) / Daiminger, F.X. (Autor:in) / Weiss, S. (Autor:in) / Hutter, M. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    311016 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    High power visible laser diode arrays

    Savolainen, P. / Pessa, M. / Heinemann, S. et al. | IEEE | 1996


    High Power Visible Laser Diode Arrays

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    High-Power Phase-Locked Diode-Laser Arrays

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Deep Level Spectroscopy in High-Power Laser Diode Arrays

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997