Interest in solid state materials, including chromium doped LiCaAlF/sub 6/ (LiCaF) and chromium doped LiSrAlF/sub 6/ (LiSaF), has created a need for pump diodes in the wavelength range of 650-690 nm. However, these visible laser diodes exhibit rather low output power due to high threshold current densities (J/sub th/), modest external quantum efficiency (/spl eta//sub d/) and low characteristic temperature (T/sub 0/). In this paper we report characteristics of GaInP/AlGaInP single quantum well visible laser arrays operating up to a CW peak power of 24 W at 675 nm, which are suitable for pumping solid state materials.


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    Titel :

    High power visible laser diode arrays


    Beteiligte:
    Savolainen, P. (Autor:in) / Pessa, M. (Autor:in) / Heinemann, S. (Autor:in) / Daiminger, F. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    130502 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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