The pulsed and cw lasing operation of a 3QW Ga/sub 0.7/In/sub 0.3/N/sub 0.003/As/sub 9.997//GaAs edge-emitting laser (/spl lambda/=1.17 /spl mu/m) have been achieved near room temperature for the first time using an oxide-confined laser design, with the low threshold current densities of 1.0 kA/cm/sup 2/ and 1.7 kA/cm/sup 2/ (at 9 /spl deg/C), respectively, for a narrow stripe width (8 /spl mu/m). The active region consists of three 7 nm thick Ga/sub 0.7/In/sub 0.3/N/sub 0.003/As/sub 9.997/ quantum wells separated by 10 nm thick GaAs barrier layers, and is bounded on either side by a 140 nm thick undoped GaAs waveguide layer. These are in-turn bounded by p-doped and n-doped Al/sub 0.3/Ga/sub 0.7/As cladding layers, respectively, and a thin Al/sub 0.98/Ga/sub 0.02/As selective oxidation layer was added at each GaAs/AlGaAs heterointerface. The epilayer structure was grown by MOCVD on n-type [100] GaAs substrates that are misoriented by 6/spl deg/ towards [111]A, which have demonstrated superior photoluminescence compared to structures grown on O/spl deg/-off substrates.
Near room temperature CW lasing operation of a narrow-stripe oxide-confined GaInNAs/GaAs multi-quantum well laser grown by MOCVD
1999-01-01
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Conference paper
Electronic Resource
English
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