By investigating the growth-rate dependence of GaInNAs/GaAs MQW grown by MOCVD, high-performance narrow-ridge laser diodes operating at 1.3 /spl mu/m have been demonstrated with a low threshold current of 25 mA, a high characteristic temperature of 180 K, and a long lifetime of 10000 hours under 1 mW CW operation at room temperature.


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    Title :

    High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD


    Contributors:
    Mitomo, J. (author) / Hino, T. (author) / Hirano, Y. (author) / Narui, H. (author)


    Publication date :

    2004-01-01


    Size :

    120212 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English