By investigating the growth-rate dependence of GaInNAs/GaAs MQW grown by MOCVD, high-performance narrow-ridge laser diodes operating at 1.3 /spl mu/m have been demonstrated with a low threshold current of 25 mA, a high characteristic temperature of 180 K, and a long lifetime of 10000 hours under 1 mW CW operation at room temperature.
High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD
2004-01-01
120212 byte
Conference paper
Electronic Resource
English
High Characteristic Temperature of GaInNAs/GaAs Narrow-Ridge Waveguide Laser Diodes Grown by MOCVD
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