Summary form only given. In this paper, we present amorphous silicon (a-Si:H) thin film transistor circuits that compensate for material shortcomings such as metastable threshold voltage shift and low mobility, and supply stable and predictable currents to drive organic light emitting diode (OLED) displays. We also discuss vertically stacked pixel architectures that enable high aperture ratio and high on-pixel integration with low parasitic capacitance and leakage current.


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    Title :

    Amorphous silicon back-plane electronics for OLED displays


    Contributors:
    Nathan, A. (author) / Sakariya, K. (author) / Kumar, A. (author) / Servati, P. (author) / Striakhilev, D. (author)


    Publication date :

    2002-01-01


    Size :

    125810 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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