We report the fabrication of a video-brightness, active-matrix organic LED (AMOLED), two-transistor-pixel based on amorphous silicon (a-Si) TFT technology, with a maximum process temperature of 350 C. The process should be compatible with existing a-Si TFT manufacturing technology for AMLCDs.
Amorphous silicon TFT active-matrix OLED pixel
1998-01-01
154283 byte
Conference paper
Electronic Resource
English
Amorphous Silicon TFT Active-Matrix OLED Pixel
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