We report the fabrication of a video-brightness, active-matrix organic LED (AMOLED), two-transistor-pixel based on amorphous silicon (a-Si) TFT technology, with a maximum process temperature of 350 C. The process should be compatible with existing a-Si TFT manufacturing technology for AMLCDs.


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    Title :

    Amorphous silicon TFT active-matrix OLED pixel


    Contributors:
    Lu, M.H. (author) / Ma, E. (author) / Sturm, J.C. (author) / Wagner, S. (author)


    Publication date :

    1998-01-01


    Size :

    154283 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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