Summary form only given. In this paper, we present amorphous silicon (a-Si:H) thin film transistor circuits that compensate for material shortcomings such as metastable threshold voltage shift and low mobility, and supply stable and predictable currents to drive organic light emitting diode (OLED) displays. We also discuss vertically stacked pixel architectures that enable high aperture ratio and high on-pixel integration with low parasitic capacitance and leakage current.


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    Titel :

    Amorphous silicon back-plane electronics for OLED displays


    Beteiligte:
    Nathan, A. (Autor:in) / Sakariya, K. (Autor:in) / Kumar, A. (Autor:in) / Servati, P. (Autor:in) / Striakhilev, D. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    125810 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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