In this paper, we review our recent results from studies of growth and optical properties of GaAsN bulk epilayers and (In)GaAsN structures by using double crystal X-ray diffraction (DCXRD), photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). We discuss the optimal growth conditions for obtaining high crystal quality GaAsN epilayers and (In)GaAsN/GaAs quantum well (QW) structures with high nitrogen composition. A newly designed GaAsN (QW) structure with multiple-InAs monolayers and 1.3 /spl mu/m InGaAsN quantum well structure are also presented.


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    Title :

    Growth and characterization of GaAsN bulk layer and (In)GaAsN quantum-well structures


    Contributors:
    Gao, Q. (author) / Tan, H.H. (author) / Jagadish, C. (author) / Sun, B.Q. (author) / Gal, M. (author) / Ouyang, L. (author) / Zou, J. (author)


    Publication date :

    2002-01-01


    Size :

    295181 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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