In this paper, we review our recent results from studies of growth and optical properties of GaAsN bulk epilayers and (In)GaAsN structures by using double crystal X-ray diffraction (DCXRD), photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). We discuss the optimal growth conditions for obtaining high crystal quality GaAsN epilayers and (In)GaAsN/GaAs quantum well (QW) structures with high nitrogen composition. A newly designed GaAsN (QW) structure with multiple-InAs monolayers and 1.3 /spl mu/m InGaAsN quantum well structure are also presented.
Growth and characterization of GaAsN bulk layer and (In)GaAsN quantum-well structures
2002-01-01
295181 byte
Conference paper
Electronic Resource
English
Growth and Characterization of GaAsN Bulk Layer and (In)GaAsN Quantum-Well Structures
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