This paper presents GaAsSb-GaAsN and GaAsSb-InGaAsN type-II QW structures on GaAs substrate as laser materials that would achieve emission at 1550 nm and beyond. The envisioned GaAsSb-(In)GaAsN type-II QW edge-emitters and VCSELs with dilute-nitride "W" active regions may be expected to display significant practical advantage over InP-based structures. These device structures represent a competitive alternative approach in achieving a high-performance GaAs-based 1550-nm diode laser technology.


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    Title :

    GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate


    Contributors:
    Tansu, N. (author) / Mawst, L.J. (author) / Vurgaftman, I. (author) / Meyer, J.R. (author)


    Publication date :

    2003-01-01


    Size :

    144669 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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