In this paper, we review our recent results from studies of growth and optical properties of GaAsN bulk epilayers and (In)GaAsN structures by using double crystal X-ray diffraction (DCXRD), photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). We discuss the optimal growth conditions for obtaining high crystal quality GaAsN epilayers and (In)GaAsN/GaAs quantum well (QW) structures with high nitrogen composition. A newly designed GaAsN (QW) structure with multiple-InAs monolayers and 1.3 /spl mu/m InGaAsN quantum well structure are also presented.


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    Titel :

    Growth and characterization of GaAsN bulk layer and (In)GaAsN quantum-well structures


    Beteiligte:
    Gao, Q. (Autor:in) / Tan, H.H. (Autor:in) / Jagadish, C. (Autor:in) / Sun, B.Q. (Autor:in) / Gal, M. (Autor:in) / Ouyang, L. (Autor:in) / Zou, J. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    295181 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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