In the present work we provide a complete and deep description of the characteristics of the cavity solitons in semiconductor cavities. We demonstrate the generation of quite a number of CSs in the transverse section, and perform a careful analysis of the switching process of CSs. The laser where we are intended to generate the cavity solitons is an oxidized bottom-emitter VCSEL emitting around 970 nm at threshold.


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    Title :

    Physics of cavity solitons in semiconductors


    Contributors:
    Hachair, X. (author) / Barland, S. (author) / Giudici, M. (author) / Balle, S. (author) / Tredicce, J. (author) / Lugiato, L.A. (author) / Tissoni, G. (author) / Brambilla, M. (author) / Maggipinto, T. (author) / Perrini, I.M. (author)


    Publication date :

    2005-01-01


    Size :

    340353 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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