A complete and deep description of the characteristics of the cavity solitons (CSs) in semiconductor cavities is provided. Generation of a number of CSs in the transverse section is demonstrated, and a careful analysis of the switching process of CSs is performed. An extended comparison between the results of the numerical simulations and those of the experiment is also presented.


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    Title :

    Physics of cavity solitons in semiconductors


    Contributors:
    Lugiato, L.A. (author) / Tissoni, G. (author) / Hachair, X. (author) / Barland, S. (author) / Furfaro, L. (author) / Giudici, M. (author) / Balle, S. (author) / Tredicce, J. (author) / Brambilla, M. (author) / Maggipinto, T. (author)


    Publication date :

    2004-01-01


    Size :

    113085 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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