A complete and deep description of the characteristics of the cavity solitons (CSs) in semiconductor cavities is provided. Generation of a number of CSs in the transverse section is demonstrated, and a careful analysis of the switching process of CSs is performed. An extended comparison between the results of the numerical simulations and those of the experiment is also presented.
Physics of cavity solitons in semiconductors
2004-01-01
113085 byte
Conference paper
Electronic Resource
English
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