In the present work we provide a complete and deep description of the characteristics of the cavity solitons in semiconductor cavities. We demonstrate the generation of quite a number of CSs in the transverse section, and perform a careful analysis of the switching process of CSs. The laser where we are intended to generate the cavity solitons is an oxidized bottom-emitter VCSEL emitting around 970 nm at threshold.


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    Titel :

    Physics of cavity solitons in semiconductors


    Beteiligte:
    Hachair, X. (Autor:in) / Barland, S. (Autor:in) / Giudici, M. (Autor:in) / Balle, S. (Autor:in) / Tredicce, J. (Autor:in) / Lugiato, L.A. (Autor:in) / Tissoni, G. (Autor:in) / Brambilla, M. (Autor:in) / Maggipinto, T. (Autor:in) / Perrini, I.M. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    340353 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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