In the present work we provide a complete and deep description of the characteristics of the cavity solitons in semiconductor cavities. We demonstrate the generation of quite a number of CSs in the transverse section, and perform a careful analysis of the switching process of CSs. The laser where we are intended to generate the cavity solitons is an oxidized bottom-emitter VCSEL emitting around 970 nm at threshold.
Physics of cavity solitons in semiconductors
2005-01-01
340353 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Physics of Cavity Solitons in Semiconductors
British Library Conference Proceedings | 2004
|Physics of cavity solitons in semiconductors
IEEE | 2004
|British Library Conference Proceedings | 1998
|British Library Online Contents | 2002
|Properties of multi-hump temporal cavity solitons
British Library Conference Proceedings | 2003
|