In the present work we provide a complete and deep description of the characteristics of the cavity solitons in semiconductor cavities. We demonstrate the generation of quite a number of CSs in the transverse section, and perform a careful analysis of the switching process of CSs. The laser where we are intended to generate the cavity solitons is an oxidized bottom-emitter VCSEL emitting around 970 nm at threshold.
Physics of cavity solitons in semiconductors
01.01.2005
340353 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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