1.55 /spl mu/m wavelength GaInAsP-InP quantum-wire lasers fabricated by two-step OMVPE growth and EBX lithography are characterized and compared with single-quantum-film lasers prepared on the same wafer. A clear anisotropic PL property as well as a blue shift energy corresponding to the wire width was confirmed. Higher differential quantum efficiency with lower threshold current operation (I/sub th/=5.5 mA, J/sub th/=34A/cm/sup 2/ at 90 K) was obtained at temperature region T<170 K.


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    Title :

    Fabrication and characterization of GaInAsP/InP long wavelength quantum-wire lasers


    Contributors:
    Arai, S. (author)


    Publication date :

    1997-01-01


    Size :

    245808 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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