A new microfabrication technique, mass transport, has made possible the development of a new breed of semiconductor laser devices. Mass-transported buried-heterostructure GaInAsP lasers are ideally suited for application in optical-fiber communication systems. In fact, the technology for mass-transported buried-heterostructure lasers has been transferred to a commercial fabricator, and these lasers are now being incorporated in optical-fiber communication systems. Mass transport has also led to the first practical surface-emitting diode lasers and monolithic two-dimensional laser arrays. Reprints. (RH)


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    Title :

    Mass-Transported GaInAsP/InP Lasers


    Contributors:
    Z. L. Liau (author) / J. N. Walpole (author)

    Publication date :

    1989


    Size :

    19 pages


    Type of media :

    Report


    Type of material :

    No indication


    Language :

    English




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