A new microfabrication technique, mass transport, has made possible the development of a new breed of semiconductor laser devices. Mass-transported buried-heterostructure GaInAsP lasers are ideally suited for application in optical-fiber communication systems. In fact, the technology for mass-transported buried-heterostructure lasers has been transferred to a commercial fabricator, and these lasers are now being incorporated in optical-fiber communication systems. Mass transport has also led to the first practical surface-emitting diode lasers and monolithic two-dimensional laser arrays. Reprints. (RH)


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    Titel :

    Mass-Transported GaInAsP/InP Lasers


    Beteiligte:
    Z. L. Liau (Autor:in) / J. N. Walpole (Autor:in)

    Erscheinungsdatum :

    1989


    Format / Umfang :

    19 pages


    Medientyp :

    Report


    Format :

    Keine Angabe


    Sprache :

    Englisch




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