Optical properties and material microstructures of InGaN/GaN quantum wells structures with various nominal indium contents, quantum well widths, and different thermal annealing conditions were compared to show the effects of indium aggregations and strains.
Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures
2003-01-01
76607 byte
Conference paper
Electronic Resource
English
| British Library Conference Proceedings | 2003
Quantum dot structures and their optical properties of a high-indium InGaN film
| British Library Conference Proceedings | 2003