Optical properties and material microstructures of InGaN/GaN quantum wells structures with various nominal indium contents, quantum well widths, and different thermal annealing conditions were compared to show the effects of indium aggregations and strains.
Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures
01.01.2003
76607 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2003
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