Optical properties and material microstructures of InGaN/GaN quantum wells structures with various nominal indium contents, quantum well widths, and different thermal annealing conditions were compared to show the effects of indium aggregations and strains.


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    Titel :

    Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures


    Beteiligte:
    Tsung-Yi Tang, (Autor:in) / Chih-Chung Teng, (Autor:in) / Shih-Chun Lin, (Autor:in) / En-Chiang Lin, (Autor:in) / Meng-Ku Chen, (Autor:in) / Cheng-Ming Wu, (Autor:in) / Jiun-Yang Chen, (Autor:in) / Yung-Chen Cheng, (Autor:in) / Shih-Wei Feng, (Autor:in) / Yang, C.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    76607 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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