Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures


    Contributors:
    Tang, T.-Y. (author) / Teng, C.-C. (author) / Lin, S.-C. (author) / Lin, E.-C. (author) / Chen, M.-K. (author) / Wu, C.-M. (author) / Chen, J.-Y. (author) / Cheng, Y.-C. (author) / Feng, S.-W. (author) / Yang, C. C. (author)

    Conference:

    5th, Pacific Rim conference on lasers and electro-optics; photonics lights innovation: from nano-structures and devices to systems and networks ; 2003 ; Taipei, Taiwan



    Publication date :

    2003-01-01


    Size :

    617 pages


    Remarks:

    Includes bibliographic references and author index



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





    Well width dependence of threshold in InGaN/AlGaN quantum well lasers

    Chow, W.W. / Amano, H. / Takeuchi, T. | IEEE | 1999


    Electronic and optical properties on non-polar InGaN/GaN quantum-well structures

    Park, S. H. / Kim, D. / Kim, H. M. et al. | IEEE | 2007


    Indium aggregated quantum dot structures in InGaN compounds

    Yang, C.C. / Shih-Wei Feng, / Yung-Chen Cheng, et al. | IEEE | 2003


    Quantum dot structures and their optical properties of a high-indium InGaN film

    Shih-Wei Feng, / En-Chiang Lin, / Yung-Chen Cheng, et al. | IEEE | 2003