Highly efficient GaInP-AlGaInP red laser diodes have been widely used in applications. In this experiment, we carried out wet-oxidation of AlAs which was selectively re-grown on ridge sides with SiO/sub 2/ masked top.


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    Title :

    High performance AlAs native oxide-confined GaInP/AlGaInP 635 nm laser diode


    Contributors:


    Publication date :

    1998-01-01


    Size :

    133857 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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