Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Low threshold 630nm band AlGaInP diode laser with AlAs native oxide current aperture


    Contributors:

    Conference:

    Annual meeting; 12th, IEEE; Lasers and Electro-Optics Society; LEOS '99 ; 1999 ; San Francisco, CA



    Publication date :

    1999-01-01


    Size :

    2 pages


    Remarks:

    IEEE cat no 99CH37009




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





    High Performance AlAs Native Oxide-Confined GaInP/AlGaInP 635nm Laser Diode

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    High performance AlAs native oxide-confined GaInP/AlGaInP 635 nm laser diode

    Hak-Hwan Kim / Dong-Ch'eol Oh / Sun-Lyeong Hwang et al. | IEEE | 1998


    Growth and Characterization of AlGaInP Diode Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Compressively Strained GaInP/AlGaInP Metal Clad Structure for 650nm Laser Diode

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995