Low threshold 630nm band AlGaInP diode laser with AlAs native oxide current aperture
Annual meeting; 12th, IEEE; Lasers and Electro-Optics Society; LEOS '99 ; 1999 ; San Francisco, CA
01.01.1999
2 pages
IEEE cat no 99CH37009
Aufsatz (Konferenz)
Englisch
LEOS , lasers , IEEE , electro-optics
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