Highly efficient GaInP-AlGaInP red laser diodes have been widely used in applications. In this experiment, we carried out wet-oxidation of AlAs which was selectively re-grown on ridge sides with SiO/sub 2/ masked top.


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    Titel :

    High performance AlAs native oxide-confined GaInP/AlGaInP 635 nm laser diode


    Beteiligte:
    Hak-Hwan Kim (Autor:in) / Dong-Ch'eol Oh (Autor:in) / Sun-Lyeong Hwang (Autor:in) / Yu-Dong Bae (Autor:in) / Kang-Hyun Sung (Autor:in) / Jong-Je Jung (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    133857 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High Performance AlAs Native Oxide-Confined GaInP/AlGaInP 635nm Laser Diode

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998




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