Highly efficient GaInP-AlGaInP red laser diodes have been widely used in applications. In this experiment, we carried out wet-oxidation of AlAs which was selectively re-grown on ridge sides with SiO/sub 2/ masked top.
High performance AlAs native oxide-confined GaInP/AlGaInP 635 nm laser diode
01.01.1998
133857 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High Performance AlAs Native Oxide-Confined GaInP/AlGaInP 635nm Laser Diode
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