We discuss the growth and properties of an AlGaInP edge emitting diode laser. The laser structure was grown by close space low pressure MOCVD. The typical L-I characteristics of the laser with a 4 /spl mu/m current aperture are shown. The laser has a 350 /spl mu/m long cavity. The threshold current is as low as 12 mA. The external differential quantum efficiency is 37.4 %. The lasing wavelength shown is 637 nm. The threshold current decreases monotonically as the aperture size decreases to 4 /spl mu/m. When the aperture size reduced further, the threshold current increases.
Low threshold 630 nm band AlGaInP diode laser with AlAs native oxide current aperture
01.01.1999
127031 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Low threshold 630nm band AlGaInP diode laser with AlAs native oxide current aperture
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