We discuss the growth and properties of an AlGaInP edge emitting diode laser. The laser structure was grown by close space low pressure MOCVD. The typical L-I characteristics of the laser with a 4 /spl mu/m current aperture are shown. The laser has a 350 /spl mu/m long cavity. The threshold current is as low as 12 mA. The external differential quantum efficiency is 37.4 %. The lasing wavelength shown is 637 nm. The threshold current decreases monotonically as the aperture size decreases to 4 /spl mu/m. When the aperture size reduced further, the threshold current increases.


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    Titel :

    Low threshold 630 nm band AlGaInP diode laser with AlAs native oxide current aperture


    Beteiligte:
    Choi, W.-J. (Autor:in) / Dapkus, P.D. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    127031 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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