Researchers have come to rely heavily on I-V Characterization as a means of evaluating power semiconductor devices' ON - state performance and performing real - time condition monitoring. However, because of their high cost, intricate operation, and possibility for errors at various setup phases, the current SIVC systems can be difficult to deploy in laboratory settings. Even though certain commercial items function exceptionally well, their high cost can often make them difficult to get. In this manuscript, a simple, precise, and economical characterization configuration is presented to deal with these problems. Conventional standards for testing discrete power device parameters may not adequately address the demands of high-power applications. In-circuit or in-situ testing methods are proposed as more suitable, allowing devices to be tested at full power and stress, mimicking real-world operation. Introducing a class of switch-mode power electronics circuit topology called Energy Recirculating and Storage Circuits, this approach enables high-power device testing with a low-power source, eliminating the need for a load. The ERSCs, derived from two-port power converters, demonstrate the ability to recirculate and store energy, simulating a higher power source. The thesis establishes ERSCs as a new switch-mode power electronic circuit classification, providing a method for their construction and synthesizing a family of ERSCs from buck and boost-derived converters. Simulations validate the proof of concept and circuit operation.


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    Title :

    Development of Characterization Circuit for Power Semiconductor Devices


    Contributors:


    Publication date :

    2024-07-31


    Size :

    557535 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English





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