Summary form only given. Previous single-wavelength pump-probe measurements on InGaAsP grown by He-plasma-assisted molecular beam epitaxy (He-plasma-grown InGaAsP) showed that this unique growth method produces picosecond, and, when combined with beryllium doping, subpicosecond conduction-band electron lifetimes, while maintaining good crystalline quality and a sharp band-edge. Dual-wavelength pump-probe results presented here allow a more detailed understanding of carrier dynamics just below the band-edge.
Dual-wavelength pump-probe measurements on helium-plasma-grown InGaAsP reveal complex carrier dynamics
1999-01-01
146025 byte
Conference paper
Electronic Resource
English
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