Summary form only given. Previous single-wavelength pump-probe measurements on InGaAsP grown by He-plasma-assisted molecular beam epitaxy (He-plasma-grown InGaAsP) showed that this unique growth method produces picosecond, and, when combined with beryllium doping, subpicosecond conduction-band electron lifetimes, while maintaining good crystalline quality and a sharp band-edge. Dual-wavelength pump-probe results presented here allow a more detailed understanding of carrier dynamics just below the band-edge.


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    Title :

    Dual-wavelength pump-probe measurements on helium-plasma-grown InGaAsP reveal complex carrier dynamics


    Contributors:
    Li Qian, (author) / Benjamin, S.D. (author) / Smith, P.W.E. (author) / Robinson, B.J. (author) / Thompson, D.A. (author)


    Publication date :

    1999-01-01


    Size :

    146025 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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