Simultaneous dual-wavelength (1350 nm and 1450 nm) lasing is achieved from an InGaAsP/InP bipolar cascade laser, which includes two different active regions and a low resistance hetero-tunnel-junction. Ultra-broadband gain materials can be obtained with such a structure.


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    Title :

    InGaAsP/InP dual wavelength bipolar cascade lasers with 100 nm wavelength spacing


    Contributors:
    Yan, J. (author) / Cai, J. (author) / Ru, G. (author) / Yu, X. (author) / Choa, F.-S. (author) / Fan, J. (author)


    Publication date :

    2005-01-01


    Size :

    2322960 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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