Simultaneous dual-wavelength (1350 nm and 1450 nm) lasing is achieved from an InGaAsP/InP bipolar cascade laser, which includes two different active regions and a low resistance hetero-tunnel-junction. Ultra-broadband gain materials can be obtained with such a structure.


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    Titel :

    InGaAsP/InP dual wavelength bipolar cascade lasers with 100 nm wavelength spacing


    Beteiligte:
    Yan, J. (Autor:in) / Cai, J. (Autor:in) / Ru, G. (Autor:in) / Yu, X. (Autor:in) / Choa, F.-S. (Autor:in) / Fan, J. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    2322960 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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