Summary form only given. Previous single-wavelength pump-probe measurements on InGaAsP grown by He-plasma-assisted molecular beam epitaxy (He-plasma-grown InGaAsP) showed that this unique growth method produces picosecond, and, when combined with beryllium doping, subpicosecond conduction-band electron lifetimes, while maintaining good crystalline quality and a sharp band-edge. Dual-wavelength pump-probe results presented here allow a more detailed understanding of carrier dynamics just below the band-edge.


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    Titel :

    Dual-wavelength pump-probe measurements on helium-plasma-grown InGaAsP reveal complex carrier dynamics


    Beteiligte:
    Li Qian, (Autor:in) / Benjamin, S.D. (Autor:in) / Smith, P.W.E. (Autor:in) / Robinson, B.J. (Autor:in) / Thompson, D.A. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    146025 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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