In this study, the double diffused FGR structure of a high-speed InGaAs/InP APD was optimized from both theoretical analysis and experimental results. A high-speed edge-breakdown-free APD with gain of more than 10 was demonstrated following the design rule. Noise of this APD was measured and analyzed incorporating the dead-space effect.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Optimization of double diffused floating guarding ring InGaAs/InP avalanche photodiodes


    Contributors:
    Jian Wei, (author) / Dries, J.C. (author) / Hongsheng Wang, (author) / Olsen, G.H. (author) / Forrest, S.R. (author)


    Publication date :

    2001-01-01


    Size :

    166989 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Numerical Simulation of Avalanche Breakdown within InP-InGaAs SAGCM Standoff Avalanche Photodiodes

    Haralson, J. N. / Parks, J. W. / Brennan, K. F. et al. | British Library Online Contents | 1997




    Resonant-Cavity InGaAs/InAlAs Separate Absorption, Charge and Multiplication Avalanche Photodiodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998