Summary form only given. In this paper we present new data on the photon-counting performance of a number of commercial APDs, designed for linear operation in data communications applications at 2.5 Gb/sec. These data include dark count rate, quantum efficiency, and jitter, as well as the variation of these parameters with temperature and bias voltage. We show that current InGaAs/InP APDs of the appropriate design are well suited to many practical applications of single-photon counting in the 1.0 to 1.6 /spl mu/m wavelength band.
Variations in the photon-counting performance of InGaAs/InP avalanche photodiodes
2003-01-01
56288 byte
Conference paper
Electronic Resource
English
Variations in the Photon-Counting Performance of InGaAs/InP Avalanche Photodiodes
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