Summary form only given. In this paper we present new data on the photon-counting performance of a number of commercial APDs, designed for linear operation in data communications applications at 2.5 Gb/sec. These data include dark count rate, quantum efficiency, and jitter, as well as the variation of these parameters with temperature and bias voltage. We show that current InGaAs/InP APDs of the appropriate design are well suited to many practical applications of single-photon counting in the 1.0 to 1.6 /spl mu/m wavelength band.


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    Titel :

    Variations in the photon-counting performance of InGaAs/InP avalanche photodiodes


    Beteiligte:
    Forsyth, J.K. (Autor:in) / Dries, J.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    56288 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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