In this study, the double diffused FGR structure of a high-speed InGaAs/InP APD was optimized from both theoretical analysis and experimental results. A high-speed edge-breakdown-free APD with gain of more than 10 was demonstrated following the design rule. Noise of this APD was measured and analyzed incorporating the dead-space effect.


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    Titel :

    Optimization of double diffused floating guarding ring InGaAs/InP avalanche photodiodes


    Beteiligte:
    Jian Wei, (Autor:in) / Dries, J.C. (Autor:in) / Hongsheng Wang, (Autor:in) / Olsen, G.H. (Autor:in) / Forrest, S.R. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    166989 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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