We developed a semi-analytical model to analyze the induced change in optical parameters of InGaAsP/InGaAsP MQWs by phosphorus-implanted quantum well intermixing (QWI). The results match well with the experimental results and can be applied for realizing photonic integrated circuits.
Quantum-well-intermixing induced shift in material bandgap and refractive index using low-energy ion implantation
2003-01-01
80459 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2003
|Laser Induced Quantum Well Intermixing for Optoelectronic Devices
British Library Conference Proceedings | 1996
|