We developed a semi-analytical model to analyze the induced change in optical parameters of InGaAsP/InGaAsP MQWs by phosphorus-implanted quantum well intermixing (QWI). The results match well with the experimental results and can be applied for realizing photonic integrated circuits.


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    Title :

    Quantum-well-intermixing induced shift in material bandgap and refractive index using low-energy ion implantation


    Contributors:
    Yen-Ting Pan, (author) / San-Liang Lee, (author) / Rong Xuan, (author) / Yu-Chen Yu, (author)


    Publication date :

    2003-01-01


    Size :

    80459 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English