We investigate the optical properties (photoluminescence and photoluminescence excitation spectra) of GaInNAs/GaAs quantum wells and discuss problems caused by the presence of nitrogen in the wells. The use of InGaAs(N)/GaAsP strain-balanced structures is suggested to improve device characteristics through the reduction of the nitrogen amount required to achieve 1.3 /spl mu/m emission. Especially, we demonstrate that 1.2 /spl mu/m emission can already be achieved in InGaAs/GaAsP structures without any nitrogen.


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    Title :

    Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers


    Contributors:
    Hetterich, M. (author) / Dawson, M.D. (author) / Egorov, A.Yu. (author) / Bernklau, D. (author) / Riechert, H. (author) / Bland, S.W. (author) / Davies, J.I. (author) / Geen, M.D. (author)


    Publication date :

    1999-01-01


    Size :

    183136 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English