In this paper, we describe an in-situ process in which etching and regrowth are performed in controlled vacuum environments without exposing samples to air. The etching includes electron cyclotron resonance (ECR) plasma H/sub 2/ to remove the native oxides, ECR SiCl/sub 4/ to etch anisotropically, and/or a brief Cl/sub 2/ chemical etch to remove any near surface damage. Solid-source molecular beam epitaxy (MBE) is used for regrowth. We have applied this in-situ all vacuum processing to the fabrication of buried heterostructure vertical cavity surface emitting laser diodes.<>
Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing
Proceedings of LEOS '93 ; 435-436
1993-01-01
126550 byte
Conference paper
Electronic Resource
English
Buried Heterostructure Surface Emitting Laser Diodes Fabricated Using Integrated Vacuum Processing
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