In this paper, we describe an in-situ process in which etching and regrowth are performed in controlled vacuum environments without exposing samples to air. The etching includes electron cyclotron resonance (ECR) plasma H/sub 2/ to remove the native oxides, ECR SiCl/sub 4/ to etch anisotropically, and/or a brief Cl/sub 2/ chemical etch to remove any near surface damage. Solid-source molecular beam epitaxy (MBE) is used for regrowth. We have applied this in-situ all vacuum processing to the fabrication of buried heterostructure vertical cavity surface emitting laser diodes.<>


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    Title :

    Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing


    Contributors:
    Hong, M. (author) / Vakhshoori, D. (author) / Grover, L.H. (author) / Mannaerts, J.P. (author) / Wynn, J.D. (author) / Freund, R.S. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    126550 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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