In this paper, we describe an in-situ process in which etching and regrowth are performed in controlled vacuum environments without exposing samples to air. The etching includes electron cyclotron resonance (ECR) plasma H/sub 2/ to remove the native oxides, ECR SiCl/sub 4/ to etch anisotropically, and/or a brief Cl/sub 2/ chemical etch to remove any near surface damage. Solid-source molecular beam epitaxy (MBE) is used for regrowth. We have applied this in-situ all vacuum processing to the fabrication of buried heterostructure vertical cavity surface emitting laser diodes.<>


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    Titel :

    Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing


    Beteiligte:
    Hong, M. (Autor:in) / Vakhshoori, D. (Autor:in) / Grover, L.H. (Autor:in) / Mannaerts, J.P. (Autor:in) / Wynn, J.D. (Autor:in) / Freund, R.S. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    126550 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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