This paper presents results on the theory and performance of a new AlGaAs GRIN HEMT-compatible diode laser structure using MBE growth with plane-selective doping. In this unique new device family, growth of pn junctions between 2-D electron/hole gases allows structures with a HEMT driver as an integral part of the device. The extremely small junction capacitance, high mobility lasers should have wide bandwidth for optical interconnections on chips or for optical communication sources.<>


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Sub-mA-threshold HEMT-compatible diode lasers


    Contributors:
    Eliason, G.W. (author) / Plant, T.K. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    142992 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Sub-mA-Threshold HEMT-Compatible Diode Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993



    Silicon Compatible Organic Light Emitting Diode

    Kim, H. H. / Miller, T. M. / Westerwick, E. H. et al. | British Library Online Contents | 1994



    Commercialization of High Power Diode Lasers and Diode-Pumped Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993