A low threshold current (11.2 mA@25/spl deg/C) with high characteristic temperature (T/sub 0/=100 K) has been obtained in 1.3 /spl mu/m InAsP/AlGaInAs MQW lasers by using ACIS (Al-oxide confined inner stripe) lasers. Less temperature sensitive quantum efficiency (-0.01 dB/K) was observed.


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    Title :

    Low threshold and high temperature characteristic of 1.3 /spl mu/m InAsP/AlGaInAs MQW ACIS lasers


    Contributors:
    Iwai, N. (author) / Shimizu, H. (author) / Yamanaka, N. (author) / Kumada, K. (author) / Mukaihara, T. (author) / Kasukawa, A. (author)


    Publication date :

    1999-01-01


    Size :

    151731 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    High-temperature operation of AlGaInAs/InP lasers

    Zah, C. E. / Bhat, R. / Lee, T. P. | British Library Online Contents | 1996


    Temperature performance of AlGaInAs semiconductor lasers

    O'Brien, D. / McInerney, J.G. / White, J.K. et al. | IEEE | 2001