Novel long wavelength in-plane lasers using selective oxidation of Al-containing layer have been reviewed. Both highly strained AlAs and lattice-matched AlInAs layers are used for oxidation. Newly developed ACIS (Al-oxide Confined Inner Stripe) lasers are one of the promising candidates for high performance, low-cost light sources.
1.3 /spl mu/m low threshold Al-oxide confined inner stripe (ACIS) lasers and ACIS laser array
1999-01-01
216613 byte
Conference paper
Electronic Resource
English
1.3 mum Low Threshold Al-Oxide Confined Inner Stripe (ACIS) Lasers and ACIS Laser Array
British Library Conference Proceedings | 1999
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|British Library Conference Proceedings | 1998
|Low Threshold and High Temperature Characteristic of 1.3 mum InAsP/AlGaInAs MQW ACIS Lasers
British Library Conference Proceedings | 1999
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