Novel long wavelength in-plane lasers using selective oxidation of Al-containing layer have been reviewed. Both highly strained AlAs and lattice-matched AlInAs layers are used for oxidation. Newly developed ACIS (Al-oxide Confined Inner Stripe) lasers are one of the promising candidates for high performance, low-cost light sources.


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    Title :

    1.3 /spl mu/m low threshold Al-oxide confined inner stripe (ACIS) lasers and ACIS laser array


    Contributors:
    Iwai, N. (author) / Mukaihara, T. (author) / Kasukawa, A. (author)


    Publication date :

    1999-01-01


    Size :

    216613 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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