A low threshold current (11.2 mA@25/spl deg/C) with high characteristic temperature (T/sub 0/=100 K) has been obtained in 1.3 /spl mu/m InAsP/AlGaInAs MQW lasers by using ACIS (Al-oxide confined inner stripe) lasers. Less temperature sensitive quantum efficiency (-0.01 dB/K) was observed.
Low threshold and high temperature characteristic of 1.3 /spl mu/m InAsP/AlGaInAs MQW ACIS lasers
01.01.1999
151731 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Low Threshold and High Temperature Characteristic of 1.3 mum InAsP/AlGaInAs MQW ACIS Lasers
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