Summary form only given. Applications in medicine and spectroscopy require fundamental mode lasers with a wavelength between 700 nm and 750 nm. At wavelengths shorter than 780 nm, however, the performance of conventional AlGaAs lasers deteriorates due to the high Al-content in the active layer. However, laser structures with Al-free tensile-strained GaAsP-QWs show excellent results in the wavelength region between 790 nm and 715 nm. We demonstrate for the first time fundamental mode lasers on the basis of a GaAsP/AlGaAs epitaxial structure, confirming the superior properties of tensile-strained GaAsP QWs.


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    Title :

    100 mW fundamental mode laser for 730 nm wavelength based on tensile-strained GaAsP-AlGaAs quantum well structures


    Contributors:
    Sebastian, I. (author) / Bugge, F. (author) / Erbert, G. (author) / Klehr, A. (author) / Knauer, A. (author) / Maege, J. (author) / Thies, A. (author) / Wenzel, H. (author) / Trankle, G. (author)


    Publication date :

    1999-01-01


    Size :

    157531 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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