Summary form only given. Applications in medicine and spectroscopy require fundamental mode lasers with a wavelength between 700 nm and 750 nm. At wavelengths shorter than 780 nm, however, the performance of conventional AlGaAs lasers deteriorates due to the high Al-content in the active layer. However, laser structures with Al-free tensile-strained GaAsP-QWs show excellent results in the wavelength region between 790 nm and 715 nm. We demonstrate for the first time fundamental mode lasers on the basis of a GaAsP/AlGaAs epitaxial structure, confirming the superior properties of tensile-strained GaAsP QWs.
100 mW fundamental mode laser for 730 nm wavelength based on tensile-strained GaAsP-AlGaAs quantum well structures
1999-01-01
157531 byte
Conference paper
Electronic Resource
English
Tensile-Strained AlGaAs/GaAsP Single Quantum-Well Lasers
British Library Conference Proceedings | 1994
|Temperature Characteristics of GaAsP/AlGaAs Tensile Strained Quantum Well Lasers
British Library Conference Proceedings | 1996
|Polarization Modulation of GaAsP/AlGaAs Tensilely Strained Quantum-Well Laser Diodes
British Library Conference Proceedings | 1994
|Interdiffused AlGaAs/GaAsP quantum well lasers
British Library Conference Proceedings | 1998
|