Summary form only given. Applications in medicine and spectroscopy require fundamental mode lasers with a wavelength between 700 nm and 750 nm. At wavelengths shorter than 780 nm, however, the performance of conventional AlGaAs lasers deteriorates due to the high Al-content in the active layer. However, laser structures with Al-free tensile-strained GaAsP-QWs show excellent results in the wavelength region between 790 nm and 715 nm. We demonstrate for the first time fundamental mode lasers on the basis of a GaAsP/AlGaAs epitaxial structure, confirming the superior properties of tensile-strained GaAsP QWs.


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    Titel :

    100 mW fundamental mode laser for 730 nm wavelength based on tensile-strained GaAsP-AlGaAs quantum well structures


    Beteiligte:
    Sebastian, I. (Autor:in) / Bugge, F. (Autor:in) / Erbert, G. (Autor:in) / Klehr, A. (Autor:in) / Knauer, A. (Autor:in) / Maege, J. (Autor:in) / Thies, A. (Autor:in) / Wenzel, H. (Autor:in) / Trankle, G. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    157531 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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