The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed.
Growth of GaAs/InAs vertical nanowires on GaAs (111)b by metalorganic chemical vapor deposition
2005-01-01
281543 byte
Conference paper
Electronic Resource
English
Growth of GaAs/InAs Vertical Nanowires on GaAs (111)B by Metalorganic Chemical Vapor Deposition
British Library Conference Proceedings | 2005
|British Library Conference Proceedings | 2002
|British Library Conference Proceedings | 2003
|British Library Conference Proceedings | 1997
|