The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed.


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    Title :

    Growth of GaAs/InAs vertical nanowires on GaAs (111)b by metalorganic chemical vapor deposition


    Contributors:
    Yong Kim, (author) / Joyce, H.J. (author) / Gao, Q. (author) / Tan, H.H. (author) / Jagadish, C. (author)


    Publication date :

    2005-01-01


    Size :

    281543 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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