The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed.


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    Titel :

    Growth of GaAs/InAs vertical nanowires on GaAs (111)b by metalorganic chemical vapor deposition


    Beteiligte:
    Yong Kim, (Autor:in) / Joyce, H.J. (Autor:in) / Gao, Q. (Autor:in) / Tan, H.H. (Autor:in) / Jagadish, C. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    281543 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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