The authors performed a series of up-conversion and pump-probe measurements on InP and InGaP grown at 200/spl deg/C and 300/spl deg/C. The optical response of these materials is found to be qualitatively the same in spite of their different electronic properties and is similar to what has also been observed in the case of LT-GaAs. The lifetime of carriers in InP is found to be 500 fs for a growth temperature of 200/spl deg/C and 1.6 ps if the growth takes place at 300/spl deg/C. A fast carrier relaxation is observed in LT-InP which is due to carrier-carrier scattering followed by induced absorption which may be associated with lattice heating.
Ultrafast carrier lifetime in low-temperature grown GaAs, InP and InGaP
Proceedings of LEOS'94 ; 2 ; 21-22 vol.2
1994-01-01
208009 byte
Conference paper
Electronic Resource
English
Ultrafast Carrier Lifetime in Low-Temperature Grown GaAs, InP and InGaP
British Library Conference Proceedings | 1994
|InGaP-GaAs-based multijunction solar cells
Online Contents | 2005
|Measuring Carrier Lifetime in GaAs by Luminescence
NTRS | 1986
|Single-junction InGaP-GaAs solar cells grown on Si substrates with SiGe buffer layers
Online Contents | 2002
|