The authors performed a series of up-conversion and pump-probe measurements on InP and InGaP grown at 200/spl deg/C and 300/spl deg/C. The optical response of these materials is found to be qualitatively the same in spite of their different electronic properties and is similar to what has also been observed in the case of LT-GaAs. The lifetime of carriers in InP is found to be 500 fs for a growth temperature of 200/spl deg/C and 1.6 ps if the growth takes place at 300/spl deg/C. A fast carrier relaxation is observed in LT-InP which is due to carrier-carrier scattering followed by induced absorption which may be associated with lattice heating.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Ultrafast carrier lifetime in low-temperature grown GaAs, InP and InGaP


    Beteiligte:
    Kostoulas, Y. (Autor:in) / Ucer, K.B. (Autor:in) / Waxer, L. (Autor:in) / Wicks, G.W. (Autor:in) / Walmsley, L.A. (Autor:in) / Fauchet, P.M. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 2 ; 21-22 vol.2


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    208009 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Ultrafast Carrier Lifetime in Low-Temperature Grown GaAs, InP and InGaP

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Energy-resolved ultrafast relaxation dynamics of low temperature grown GaAs

    Segschneider, G. / Dekorsy, T. / Kurz, H. et al. | IEEE | 1997


    InGaP-GaAs-based multijunction solar cells

    Takamoto, Tatsuya | Online Contents | 2005