Luminescence proposed as nondestructive technique for measuring Shockley-Read-Hall (SRH) recombination lifetime GaAs. Sample irradiated, and luminescence escapes through surface. Measurement requires no mechanical or electrical contact with sample. No ohmic contacts or p/n junctions needed. Sample not scrapped after tested.


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    Titel :

    Measuring Carrier Lifetime in GaAs by Luminescence


    Beteiligte:
    Von Roos, O. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1986-01-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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