As a fundamental approach, we have reported the growth of free-standing conducting GaN substrate by hydride vapor phase epitaxy (HVPE) and have successfully demonstrated a homoepitaxially grown LED with top-bottom contact for the first time. We present device characteristics of optical devices on GaN substrates and technical issues for surface damage and stability of GaN substrates.


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    Title :

    GaN optical devices on free-standing GaN substrates


    Contributors:


    Publication date :

    1999-01-01


    Size :

    156254 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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