As a fundamental approach, we have reported the growth of free-standing conducting GaN substrate by hydride vapor phase epitaxy (HVPE) and have successfully demonstrated a homoepitaxially grown LED with top-bottom contact for the first time. We present device characteristics of optical devices on GaN substrates and technical issues for surface damage and stability of GaN substrates.
GaN optical devices on free-standing GaN substrates
1999-01-01
156254 byte
Conference paper
Electronic Resource
English
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